🎅 Early holiday celebration: Get 5% discount on every order till Dec. 14th! 🎅 Shop now!

📢 Announcement: Orders placed during the US holiday season will begin processing on or after Dec. 1st. 📢

🚀 New Platform Beta is Live! Expect some delays in processing orders! Apologies for the inconveniences! 🚀 Order now!

Active

STH310N10F7-2

N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1 (*)
GradeIndustrial
Package NameH2PAK-2

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key features
  • Among the lowest RDS(on) on the market
  • Excellent figure of merit (FoM)
  • Low Crss/Ciss ratio for EMI immunity
  • High avalanche ruggedness
In stock
Quantity $ per unit Savings
1-9$5.180%
10-99$3.7528%
100-499$2.9144%
500$2.9044%
Contact sales
$5.18
$5.18
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1 (*)
GradeIndustrial
Package NameH2PAK-2

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key features
  • Among the lowest RDS(on) on the market
  • Excellent figure of merit (FoM)
  • Low Crss/Ciss ratio for EMI immunity
  • High avalanche ruggedness