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STH310N10F7-2
N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack1 (*) |
| Grade | Industrial |
| Package Name | H2PAK-2 |
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $5.09 | 0% |
| 10-24 | $3.68 | 28% |
| 25-99 | $3.67 | 28% |
| 100-249 | $2.74 | 46% |
| 250-499 | $2.73 | 46% |
| 500 | $2.45 | 52% |
| 500 + | Contact sales | |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack1 (*) |
| Grade | Industrial |
| Package Name | H2PAK-2 |
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
|