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    STH315N10F7-2

    Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack1 (*)
    GradeAutomotive
    Package NameH2PAK-2
    Description

    These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

    Key features
    Key features
    • AEC-Q101 qualified
    • Among the lowest RDS(on) on the market
    • Excellent FoM (figure of merit)
    • Low Crss/Ciss ratio for EMI immunity
    • High avalanche ruggedness
    In stock
    Quantity $ per unit Savings
    1-9$5.400%
    10-20$4.5416%
    20 + Contact sales
    $5.40
    $5.40
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack1 (*)
    GradeAutomotive
    Package NameH2PAK-2
    Description

    These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

    Key features
    Key features
    • AEC-Q101 qualified
    • Among the lowest RDS(on) on the market
    • Excellent FoM (figure of merit)
    • Low Crss/Ciss ratio for EMI immunity
    • High avalanche ruggedness
    Associated products