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    STIPQ3M60T-HZS

    SLLIMM nano 2nd series IPM, 3-phase inverter, 3 A, 1.6 Ohm max., 600 V, MOSFET

    Parameters
    Target Application3-phase Induction Motor (ACIM)
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius150.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameN2DIP-26L
    Description

    This SLLIMM (small low-loss intelligent molded module)-nano provides a compact, high-performance AC motor drive in a simple, rugged design. It is composed of six N-channel MDmesh DM2 Power MOSFETs with intrinsic fast-recovery diode and three half-bridge HVICs for gate driving, providing low...
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    Key features
    Key features
    • IPM 3 A, 600 V, RDS(on) = 1.6 Ω, 3-phase Power MOSFET inverter bridge including control ICs for gate driving
    • Optimized for low electromagnetic interference
    • 3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pull-down/pull-up resistors
    • Undervoltage lockout
    • Internal bootstrap diode
    • Interlocking function
    • Shutdown function
    • Comparator for fault protection against overtemperature and overcurrent
    • Op-amp for advanced current sensing
    • Optimized pinout for easy board layout
    • NTC for temperature control (UL 1434 CA 2 and 4)
    • Isolation ratings of 1800 Vrms/min.
    • UL recognition: UL 1557 file, E81734
    Out of Stock
    Quantity $ per unit Savings
    1-359$10.480%
    360-500$6.7336%
    500 + Contact sales
    $10.48
    Parameters
    Target Application3-phase Induction Motor (ACIM)
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius150.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameN2DIP-26L
    Description

    This SLLIMM (small low-loss intelligent molded module)-nano provides a compact, high-performance AC motor drive in a simple, rugged design. It is composed of six N-channel MDmesh DM2 Power MOSFETs with intrinsic fast-recovery diode and three half-bridge HVICs for gate driving, providing low...
    Read More

    Key features
    Key features
    • IPM 3 A, 600 V, RDS(on) = 1.6 Ω, 3-phase Power MOSFET inverter bridge including control ICs for gate driving
    • Optimized for low electromagnetic interference
    • 3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pull-down/pull-up resistors
    • Undervoltage lockout
    • Internal bootstrap diode
    • Interlocking function
    • Shutdown function
    • Comparator for fault protection against overtemperature and overcurrent
    • Op-amp for advanced current sensing
    • Optimized pinout for easy board layout
    • NTC for temperature control (UL 1434 CA 2 and 4)
    • Isolation ratings of 1800 Vrms/min.
    • UL recognition: UL 1557 file, E81734