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    STL4N10F7

    N-channel 100 V, 0.062 Ohm typ., 4.5 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NamePowerFLAT 3.3x3.3
    Description

    This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

    Key features
    Key features
    • Excellent FoM (figure of merit)
    • Low Crss/Ciss ration for EMI immunity
    • High avalanche ruggedness
    In stock
    Quantity $ per unit Savings
    1-9$0.850%
    10-99$0.7512%
    100$0.5832%
    100 + Contact sales
    $0.85
    $0.85
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NamePowerFLAT 3.3x3.3
    Description

    This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

    Key features
    Key features
    • Excellent FoM (figure of merit)
    • Low Crss/Ciss ration for EMI immunity
    • High avalanche ruggedness
    Associated products