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STL60N10F7

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N-channel 100 V, 14.5 mOhm typ., 12 A, STripFET F7 DeepGATE Power MOSFET in a PowerFLAT 5x6 package

Quantity $ per Unit Savings
1 - 9$1.490%
10 - 50$1.3311%
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Out of stock
$1.49
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerFLAT 5x6

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key features
  • Among the lowest RDS(on) on the market
  • Excellent FoM (figure of merit)
  • Low Crss/Ciss ratio for EMI immunity
  • High avalanche ruggedness