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STL60N10F7

N-channel 100 V, 14.5 mOhm typ., 12 A, STripFET F7 DeepGATE Power MOSFET in a PowerFLAT 5x6 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerFLAT 5x6

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key features
  • Among the lowest RDS(on) on the market
  • Excellent FoM (figure of merit)
  • Low Crss/Ciss ratio for EMI immunity
  • High avalanche ruggedness
In stock
Quantity $ per unit Savings
1-9$0.691%
10-24$0.673%
25-99$0.673%
100-249$0.638%
250-499$0.639%
500$0.6111%
Contact sales
$0.69
$0.69
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerFLAT 5x6

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key features
  • Among the lowest RDS(on) on the market
  • Excellent FoM (figure of merit)
  • Low Crss/Ciss ratio for EMI immunity
  • High avalanche ruggedness