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STM32F410TBY7TR

STM32F410TBY7TR

STM32F410TBY3TR

STM32F410TBY3TR

STM32F410TBY6TR

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STM32 Dynamic Efficiency MCU with BAM, High-performance and DSP with FPU, ARM Cortex-M4 MCU with 128 Kbytes Flash, 100 MHz CPU, Art Accelerator

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Parameter NameParameter Value
Supply Voltage Min Volt1.7
Supply Voltage Max Volt3.6
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius85.0
CoreArm Cortex-M4
ECCN US3A991.a.2
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameWLCSP 36 2.6x2.6x0.6 P 0.4 mm

The STM32F410x8/B devices are based on the high-performance Arm® Cortex® -M4 32-bit RISC core operating at a frequency of up to 100 MHz. Their Cortex®-M4 core features a Floating point unit (FPU) single precision which supports all Arm single-precision data-processing instructions and data types. It also implements a full set of DSP instructions and a memory protection unit (MPU) which enhances application security.


The STM32F410x8/B belong to the STM32 Dynamic Efficiency™ product line (with products combining power efficiency, performance and integration) while adding a new innovative feature called Batch Acquisition Mode (BAM) allowing to save even more power consumption during data batching.


The STM32F410x8/B incorporate high-speed embedded memories (up to 128 Kbytes of Flash memory, 32 Kbytes of SRAM), and an extensive range of enhanced I/Os and peripherals connected to two APB buses, one AHB bus and a 32-bit multi-AHB bus matrix.


All devices offer one 12-bit ADC, one 12-bit DAC, a low-power RTC, three general-purpose 16-bit timers, one PWM timer for motor control, one general-purpose 32-bit timers and one 16-bit low-power timer. They also feature standard and advanced communication interfaces.

Key features
  • Dynamic Efficiency Line with eBAM (enhanced Batch Acquisition Mode)
    • 1.7 V to 3.6 V power supply
    • -40 °C to 85/105/125 °C temperature range
  • Core: Arm® 32-bit Cortex®-M4 CPU with FPU, Adaptive real-time accelerator (ART Accelerator™) allowing 0-wait state execution from Flash memory, frequency up to 100 MHz, memory protection unit, 125 DMIPS/1.25 DMIPS/MHz (Dhrystone 2.1), and DSP instructions
  • Memories
    • Up to 128 Kbytes of Flash memory
    • 512 bytes of OTP memory
    • 32 Kbytes of SRAM
  • Clock, reset and supply management
    • 1.7 V to 3.6 V application supply and I/Os
    • POR, PDR, PVD and BOR
    • 4-to-26 MHz crystal oscillator
    • Internal 16 MHz factory-trimmed RC
    • 32 kHz oscillator for RTC with calibration
    • Internal 32 kHz RC with calibration
  • Power consumption
    • Run: 89 μA/MHz (peripheral off)
    • Stop (Flash in Stop mode, fast wakeup time): 40 μA Typ @ 25 °C; 49 μA max @25 °C
    • Stop (Flash in Deep power down mode, slow wakeup time): down to 6 μA @ 25 °C; 14 μA max @25 °C
    • Standby: 2.4 μA @25 °C / 1.7 V without RTC; 12 μA @85 °C @1.7 V
    • VBAT supply for RTC: 1 μA @25 °C
  • 1×12-bit, 2.4 MSPS ADC: up to 16 channels
  • 1×12-bit D/A converter
  • General-purpose DMA: 16-stream DMA controllers with FIFOs and burst support
  • Up to 9 timers
    • One low-power timer (available in Stop mode)
    • One 16-bit advanced motor-control timer
    • Three 16-bit general purpose timers
    • One 32-bit timer up to 100 MHz with up to four IC/OC/PWM or pulse counter and quadrature (incremental) encoder input
    • Two watchdog timers (independent window)
    • SysTick timer.
  • Debug mode
    • Serial wire debug (SWD) & JTAG interfaces
    • Cortex® -M4 Embedded Trace Macrocell™
  • Up to 50 I/O ports with interru