STM32F411RCT7TR

STM32F411RCT7TR

STM32F411RCT6

STM32F411RCT6

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STM32F411RCT7

High-performance access line, Arm Cortex-M4 core with DSP and FPU, 256 Kbytes of Flash memory, 100 MHz CPU, ART Accelerator

Supply Voltage Min Volt1.7
Supply Voltage Max Volt3.6
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius105.0
CoreArm Cortex-M4
ECCN US3A991.a.2
ECCN EUNEC
Packing TypeTray
RoHs compliantEcopack2
GradeIndustrial
Package NameLQFP 64 10x10x1.4 mm

The STM32F411xC/xE devices are based on the high-performance Arm® Cortex® -M4 32-bit RISC core operating at a frequency of up to 100 MHz. The Cortex®-M4 core features a Floating point unit (FPU) single precision which supports all Arm single-precision data-processing instructions and data types....
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Key features
  • Dynamic Efficiency Line with BAM (Batch Acquisition Mode)
    • 1.7 V to 3.6 V power supply
    • - 40°C to 85/105/125 °C temperature range
  • Core: Arm® 32-bit Cortex®-M4 CPU with FPU, Adaptive real-time accelerator (ART Accelerator™) allowing 0-wait state execution from Flash memory, frequency up to 100 MHz, memory protection unit, 125 DMIPS/1.25 DMIPS/MHz (Dhrystone 2.1), and DSP instructions
  • Memories
    • Up to 512 Kbytes of Flash memory
    • 128 Kbytes of SRAM
  • Clock, reset and supply management
    • 1.7 V to 3.6 V application supply and I/Os
    • POR, PDR, PVD and BOR
    • 4-to-26 MHz crystal oscillator
    • Internal 16 MHz factory-trimmed RC
    • 32 kHz oscillator for RTC with calibration
    • Internal 32 kHz RC with calibration
  • Power consumption
    • Run: 100 μA/MHz (peripheral off)
    • Stop (Flash in Stop mode, fast wakeup time): 42 μA Typ @ 25C; 65 μA max @25 °C
    • Stop (Flash in Deep power down mode, slow wakeup time): down to 9 μA @ 25 °C; 28 μA max @25 °C
    • Standby: 1.8 μA @25 °C / 1.7 V without RTC; 11 μA @85 °C @1.7 V
    • VBAT supply for RTC: 1 μA @25 °C
  • 1×12-bit, 2.4 MSPS A/D converter: up to 16 channels
  • General-purpose DMA: 16-stream DMA controllers with FIFOs and burst support
  • Up to 11 timers: up to six 16-bit, two 32-bit timers up to 100 MHz, each with up to four IC/OC/PWM or pulse counter and quadrature (incremental) encoder input, two watchdog timers (independent and window) and a SysTick timer
  • Debug mode
    • Serial wire debug (SWD) & JTAG interfaces
    • Cortex®-M4 Embedded Trace Macrocell™
  • Up to 81 I/O ports with interrupt capability
    • Up to 78 fast I/Os up to 100 MHz
    • Up to 77 5 V-tolerant I/Os
  • Up to 13 communication interfaces
    • Up to 3 x I2C interfaces (SMBus/PMBus)
Out of Stock
Quantity $ per unit Savings
1-9$7.270%
10-24$6.5810%
25-99$6.2714%
100-249$5.4425%
250-499$5.1929%
500-959$4.7335%
960-10000$4.1343%
Contact sales
$7.27
Supply Voltage Min Volt1.7
Supply Voltage Max Volt3.6
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius105.0
CoreArm Cortex-M4
ECCN US3A991.a.2
ECCN EUNEC
Packing TypeTray
RoHs compliantEcopack2
GradeIndustrial
Package NameLQFP 64 10x10x1.4 mm

The STM32F411xC/xE devices are based on the high-performance Arm® Cortex® -M4 32-bit RISC core operating at a frequency of up to 100 MHz. The Cortex®-M4 core features a Floating point unit (FPU) single precision which supports all Arm single-precision data-processing instructions and data types....
Read More

Key features
  • Dynamic Efficiency Line with BAM (Batch Acquisition Mode)
    • 1.7 V to 3.6 V power supply
    • - 40°C to 85/105/125 °C temperature range
  • Core: Arm® 32-bit Cortex®-M4 CPU with FPU, Adaptive real-time accelerator (ART Accelerator™) allowing 0-wait state execution from Flash memory, frequency up to 100 MHz, memory protection unit, 125 DMIPS/1.25 DMIPS/MHz (Dhrystone 2.1), and DSP instructions
  • Memories
    • Up to 512 Kbytes of Flash memory
    • 128 Kbytes of SRAM
  • Clock, reset and supply management
    • 1.7 V to 3.6 V application supply and I/Os
    • POR, PDR, PVD and BOR
    • 4-to-26 MHz crystal oscillator
    • Internal 16 MHz factory-trimmed RC
    • 32 kHz oscillator for RTC with calibration
    • Internal 32 kHz RC with calibration
  • Power consumption
    • Run: 100 μA/MHz (peripheral off)
    • Stop (Flash in Stop mode, fast wakeup time): 42 μA Typ @ 25C; 65 μA max @25 °C
    • Stop (Flash in Deep power down mode, slow wakeup time): down to 9 μA @ 25 °C; 28 μA max @25 °C
    • Standby: 1.8 μA @25 °C / 1.7 V without RTC; 11 μA @85 °C @1.7 V
    • VBAT supply for RTC: 1 μA @25 °C
  • 1×12-bit, 2.4 MSPS A/D converter: up to 16 channels
  • General-purpose DMA: 16-stream DMA controllers with FIFOs and burst support
  • Up to 11 timers: up to six 16-bit, two 32-bit timers up to 100 MHz, each with up to four IC/OC/PWM or pulse counter and quadrature (incremental) encoder input, two watchdog timers (independent and window) and a SysTick timer
  • Debug mode
    • Serial wire debug (SWD) & JTAG interfaces
    • Cortex®-M4 Embedded Trace Macrocell™
  • Up to 81 I/O ports with interrupt capability
    • Up to 78 fast I/Os up to 100 MHz
    • Up to 77 5 V-tolerant I/Os
  • Up to 13 communication interfaces
    • Up to 3 x I2C interfaces (SMBus/PMBus)