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    STM32F412VET3TR

    STM32F412VET3TR

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    STM32F412VEH6TR

    STM32 Dynamic Efficiency MCU with BAM, High-performance and DSP with FPU, Arm Cortex-M4 MCU with 512 Kbytes of Flash memory, 100 MHz CPU, Art Accelerator, DFSDM

    Parameters
    Supply Voltage Min Volt1.7
    Supply Voltage Max Volt3.6
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius85.0
    CoreArm Cortex-M4
    ECCN US3A991.a.2
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameUFBGA 100 7x7x0.6 P 0.5 mm
    Description

    STM32F412xE/G devices are based on the high-performance Arm® Cortex® -M4 32-bit RISC core operating at a frequency of up to 100 MHz. Their Cortex®-M4 core features a Floating point unit (FPU) single precision which supports all Arm single-precision data-processing instructions and data types. It...
    Read More

    Key features
    Key features
    • Dynamic Efficiency Line with BAM (Batch Acquisition Mode)
    • Core: Arm® 32-bit Cortex®-M4 CPU with FPU, Adaptive real-time accelerator (ART Accelerator™) allowing 0-wait state execution from Flash memory, frequency up to 100 MHz, memory protection unit, 125 DMIPS/1.25 DMIPS/MHz (Dhrystone 2.1), and DSP instructions
    • Memories
      • Up to 1 Mbyte of Flash memory
      • 256 Kbyte of SRAM
      • Flexible external static memory controller with up to 16-bit data bus: SRAM, PSRAM, NOR Flash memory
      • Dual mode Quad-SPI interface
    • LCD parallel interface, 8080/6800 modes
    • Clock, reset and supply management
      • 1.7 V to 3.6 V application supply and I/Os
      • POR, PDR, PVD and BOR
      • 4-to-26 MHz crystal oscillator
      • Internal 16 MHz factory-trimmed RC
      • 32 kHz oscillator for RTC with calibration
      • Internal 32 kHz RC with calibration
    • Power consumption
      • Run: 112 μA/MHz (peripheral off)
      • Stop (Flash in Stop mode, fast wakeup time): 50 μA Typ @ 25 °C; 75 μA max @25 °C
      • Stop (Flash in Deep power down mode, slow wakeup time): down to 18 μA @ 25 °C; 40 μA max @25 °C
      • Standby: 2.4 μA @25 °C / 1.7 V without RTC; 12 μA @85 °C @1.7 V
      • VBAT supply for RTC: 1 μA @25 °C
    • 1×12-bit, 2.4 MSPS ADC: up to 16 channels
    • 2x digital filters for sigma delta modulator, 4x PDM interfaces, stereo microphone support
    • General-purpose DMA: 16-stream DMA
    • Up to 17 timers: up to twelve 16-bit timers, two 32-bit timers up to 100 MHz each with up to four IC/OC/PWM or pulse counter and quadrature (incremental) encoder input, two watchdog timers (independent and window), one SysTick timer
    • Debug mode
      • Serial wire debug (SWD) & JTAG
      • Cortex®-M4 Embedded Trace Macrocell™
    • Up to 114 I/O ports with interrupt capability
      • Up to 109 fast I/Os up to 100 MHz
    Out of Stock
    Quantity $ per unit Savings
    1-9$10.660%
    10-24$9.6310%
    25-99$9.1814%
    100-249$7.9825%
    250-499$7.6229%
    500$6.9535%
    500 + Contact sales
    $10.66
    Parameters
    Supply Voltage Min Volt1.7
    Supply Voltage Max Volt3.6
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius85.0
    CoreArm Cortex-M4
    ECCN US3A991.a.2
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameUFBGA 100 7x7x0.6 P 0.5 mm
    Description

    STM32F412xE/G devices are based on the high-performance Arm® Cortex® -M4 32-bit RISC core operating at a frequency of up to 100 MHz. Their Cortex®-M4 core features a Floating point unit (FPU) single precision which supports all Arm single-precision data-processing instructions and data types. It...
    Read More

    Key features
    Key features
    • Dynamic Efficiency Line with BAM (Batch Acquisition Mode)
    • Core: Arm® 32-bit Cortex®-M4 CPU with FPU, Adaptive real-time accelerator (ART Accelerator™) allowing 0-wait state execution from Flash memory, frequency up to 100 MHz, memory protection unit, 125 DMIPS/1.25 DMIPS/MHz (Dhrystone 2.1), and DSP instructions
    • Memories
      • Up to 1 Mbyte of Flash memory
      • 256 Kbyte of SRAM
      • Flexible external static memory controller with up to 16-bit data bus: SRAM, PSRAM, NOR Flash memory
      • Dual mode Quad-SPI interface
    • LCD parallel interface, 8080/6800 modes
    • Clock, reset and supply management
      • 1.7 V to 3.6 V application supply and I/Os
      • POR, PDR, PVD and BOR
      • 4-to-26 MHz crystal oscillator
      • Internal 16 MHz factory-trimmed RC
      • 32 kHz oscillator for RTC with calibration
      • Internal 32 kHz RC with calibration
    • Power consumption
      • Run: 112 μA/MHz (peripheral off)
      • Stop (Flash in Stop mode, fast wakeup time): 50 μA Typ @ 25 °C; 75 μA max @25 °C
      • Stop (Flash in Deep power down mode, slow wakeup time): down to 18 μA @ 25 °C; 40 μA max @25 °C
      • Standby: 2.4 μA @25 °C / 1.7 V without RTC; 12 μA @85 °C @1.7 V
      • VBAT supply for RTC: 1 μA @25 °C
    • 1×12-bit, 2.4 MSPS ADC: up to 16 channels
    • 2x digital filters for sigma delta modulator, 4x PDM interfaces, stereo microphone support
    • General-purpose DMA: 16-stream DMA
    • Up to 17 timers: up to twelve 16-bit timers, two 32-bit timers up to 100 MHz each with up to four IC/OC/PWM or pulse counter and quadrature (incremental) encoder input, two watchdog timers (independent and window), one SysTick timer
    • Debug mode
      • Serial wire debug (SWD) & JTAG
      • Cortex®-M4 Embedded Trace Macrocell™
    • Up to 114 I/O ports with interrupt capability
      • Up to 109 fast I/Os up to 100 MHz