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STP100N6F7

N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a TO-220 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key features
  • Among the lowest RDS(on)on the market
  • Excellent figure of merit (FoM)
  • Low Crss/Cissratio for EMI immunity
  • High avalanche ruggedness
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Quantity $ per unit Savings
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10-50$1.4019%
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$1.73
$1.72
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key features
  • Among the lowest RDS(on)on the market
  • Excellent figure of merit (FoM)
  • Low Crss/Cissratio for EMI immunity
  • High avalanche ruggedness