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N-channel 30 V, 2.7 mOhm typ., 150 A STripFET H6 Power MOSFET in a TO-220 package
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | TO-220 |
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
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Quantity | $ per unit | Savings |
---|---|---|
1-9 | $0.99 | 0% |
10-99 | $0.80 | 19% |
100 | $0.63 | 36% |
100 + |
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ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | TO-220 |
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
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