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    STP160N4LF6

    N-channel 40 V, 0.0021 Ohm typ., 120 A STripFET F6 Power MOSFET in TO-220 package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-220
    Description

    This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.

    Key features
    Key features
    • RDS(on)* Qgindustry benchmark
    • Extremely low on-resistance RDS(on)
    • Logic level drive
    • High avalanche ruggedness
    • 100% avalanche tested
    In stock
    Quantity $ per unit Savings
    1-9$1.450%
    10-99$1.2415%
    100-499$0.9336%
    500$0.7846%
    500 + Contact sales
    $1.45
    $1.45
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-220
    Description

    This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.

    Key features
    Key features
    • RDS(on)* Qgindustry benchmark
    • Extremely low on-resistance RDS(on)
    • Logic level drive
    • High avalanche ruggedness
    • 100% avalanche tested