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STP4LN80K5

N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in a TO-220 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key features
  • Industry’s lowest RDS(on) * area
  • Industry’s best figure of merit (FoM)
  • Ultra low-gate charge
  • 100% avalanche tested
  • Zener-protected
Out of Stock
Quantity $ per unit Savings
1-500$2.180%
Contact sales
$2.18
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key features
  • Industry’s lowest RDS(on) * area
  • Industry’s best figure of merit (FoM)
  • Ultra low-gate charge
  • 100% avalanche tested
  • Zener-protected