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STPSC10065DLF
650 V 10 A power Schottky silicon carbide diode
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | POWER FLAT MLPD 8X8 4L MIXPLANT |
This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
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In stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $4.00 | 0% |
| 10-99 | $2.80 | 30% |
| 100-499 | $2.16 | 46% |
| 500 | $1.78 | 55% |
| 500 + | Contact sales | |
$4.00
$4.00
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | POWER FLAT MLPD 8X8 4L MIXPLANT |
This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
Read More
|