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STPSC10065DLF

650 V 10 A power Schottky silicon carbide diode

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NamePOWER FLAT MLPD 8X8 4L MIXPLANT

This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
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Key features
  • Less than 1 mm height package
  • High creepage package
  • No or negligible reverse recovery
  • Temperature independent switching behavior
  • High forward surge capability
  • Very low drop forward voltage
  • Power efficient product
  • ECOPACK2 compliant component
In stock
Quantity $ per unit Savings
1-9$3.530%
10-50$2.9616%
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$3.53
$3.53
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NamePOWER FLAT MLPD 8X8 4L MIXPLANT

This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
Read More

Key features
  • Less than 1 mm height package
  • High creepage package
  • No or negligible reverse recovery
  • Temperature independent switching behavior
  • High forward surge capability
  • Very low drop forward voltage
  • Power efficient product
  • ECOPACK2 compliant component