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STPSC20H12CWY
20 A 1200 V power Schottky silicon carbide diode
| Operating Temp Min Celsius | -40.0 |
| Operating Temp Max Celsius | 175.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Automotive |
| Package Name | HIP247 |
The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.Due to the Schottky construction, no recovery is...
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $10.18 | 0% |
| 10-99 | $8.69 | 15% |
| 100-249 | $7.24 | 29% |
| 250-500 | $6.94 | 32% |
| 500 + | Contact sales | |
| Operating Temp Min Celsius | -40.0 |
| Operating Temp Max Celsius | 175.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Automotive |
| Package Name | HIP247 |
The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.Due to the Schottky construction, no recovery is...
Read More
|