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20 A 1200 V power Schottky silicon carbide diode
Operating Temp Min Celsius | -40.0 |
Operating Temp Max Celsius | 175.0 |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Automotive |
Package Name | HIP247 |
The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.Due to the Schottky construction, no recovery is...
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Quantity | $ per unit | Savings |
---|---|---|
1-9 | $8.36 | 0% |
10-99 | $7.02 | 16% |
100-249 | $7.01 | 16% |
250-500 | $6.95 | 17% |
500 + |
Contact sales |
Operating Temp Min Celsius | -40.0 |
Operating Temp Max Celsius | 175.0 |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Automotive |
Package Name | HIP247 |
The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.Due to the Schottky construction, no recovery is...
Read More
|