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STPSC20H12CWY

20 A 1200 V power Schottky silicon carbide diode

Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeAutomotive
Package NameHIP247

The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.Due to the Schottky construction, no recovery is...
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Key features
  • AEC-Q101 qualified
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high-voltage periphery
  • PPAP capable
  • Operating Tj from -40 °C to 175 °C
  • ECOPACK2 compliant
In stock
Quantity $ per unit Savings
1-9$8.360%
10-99$7.0216%
100-249$7.0116%
250-500$6.9517%
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$8.36
$8.36
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeAutomotive
Package NameHIP247

The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.Due to the Schottky construction, no recovery is...
Read More

Key features
  • AEC-Q101 qualified
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high-voltage periphery
  • PPAP capable
  • Operating Tj from -40 °C to 175 °C
  • ECOPACK2 compliant