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STPSC30G12WL
1200 V, 30 A High surge Silicon Carbide Power Schottky Diode
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | DO247 LONG LEADS |
The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky...
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $13.02 | 0% |
| 10-24 | $12.55 | 4% |
| 25-99 | $8.36 | 36% |
| 100-500 | $8.19 | 37% |
| 500 + | Contact sales | |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | DO247 LONG LEADS |
The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky...
Read More
|