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STPSC31H12CWY

2x15A 1200V Power Schottky Silicon Carbide Diode Automotive

Operating RangeAutomotive
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeAutomotive
Package NameHIP247

The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.Due to the Schottky construction, no recovery is...
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Key features
  • AEC-Q101 qualified
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high-voltage periphery
  • PPAP capable
  • Operating Tj from -40 °C to 175 °C
  • ECOPACK 2 compliant
Out of Stock
Quantity $ per unit Savings
1-9$15.090%
10$13.5910%
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$15.09
Operating RangeAutomotive
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeAutomotive
Package NameHIP247

The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.Due to the Schottky construction, no recovery is...
Read More

Key features
  • AEC-Q101 qualified
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high-voltage periphery
  • PPAP capable
  • Operating Tj from -40 °C to 175 °C
  • ECOPACK 2 compliant