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    STPSC31H12CWY

    2x15A 1200V Power Schottky Silicon Carbide Diode Automotive

    Parameters
    Operating RangeAutomotive
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeAutomotive
    Package NameHIP247
    Description

    The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.Due to the Schottky construction, no recovery is...
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    Key features
    Key features
    • AEC-Q101 qualified
    • No or negligible reverse recovery
    • Switching behavior independent of temperature
    • Robust high-voltage periphery
    • PPAP capable
    • Operating Tj from -40 °C to 175 °C
    • ECOPACK 2 compliant
    Out of Stock
    Quantity $ per unit Savings
    1-9$15.090%
    10$13.5910%
    10 + Contact sales
    $15.09
    Parameters
    Operating RangeAutomotive
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeAutomotive
    Package NameHIP247
    Description

    The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.Due to the Schottky construction, no recovery is...
    Read More

    Key features
    Key features
    • AEC-Q101 qualified
    • No or negligible reverse recovery
    • Switching behavior independent of temperature
    • Robust high-voltage periphery
    • PPAP capable
    • Operating Tj from -40 °C to 175 °C
    • ECOPACK 2 compliant