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STPSC40065CW
650 V power Schottky silicon-carbide diode
| Operating Range | Industrial |
| Operating Temp Min Celsius | -40.0 |
| Operating Temp Max Celsius | 175.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | TO-247 |
The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are...
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $11.04 | 0% |
| 10-24 | $11.02 | 0% |
| 25-49 | $8.94 | 19% |
| 50-99 | $8.69 | 21% |
| 100-249 | $8.18 | 26% |
| 250-500 | $7.53 | 32% |
| 500 + | Contact sales | |
| Operating Range | Industrial |
| Operating Temp Min Celsius | -40.0 |
| Operating Temp Max Celsius | 175.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | TO-247 |
The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are...
Read More
|