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STPSC40065CW

650 V power Schottky silicon-carbide diode

Operating RangeIndustrial
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247

The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are...
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Key features
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • ECOPACK®2 compliant component
Out of Stock
Quantity $ per unit Savings
1-9$7.910%
10-99$6.3220%
100-500$5.8626%
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$7.91
Operating RangeIndustrial
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247

The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are...
Read More

Key features
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • ECOPACK®2 compliant component