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    STPSC40065CWY

    Automotive 650 V, 40 A dual SiC Power Schottky Diode

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeAutomotive
    Package NameTO-247
    Description

    The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are...
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    Key features
    Key features
    • No reverse recovery charge in application current range
    • Switching behavior independent of temperature
    • Dedicated to PFC applications
    • AEC-Q101 qualified
    • PPAP capable
    • ECOPACK®2 compliant component
    In stock
    Quantity $ per unit Savings
    1-9$10.270%
    10$9.1011%
    10 + Contact sales
    $10.27
    $10.27
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeAutomotive
    Package NameTO-247
    Description

    The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are...
    Read More

    Key features
    Key features
    • No reverse recovery charge in application current range
    • Switching behavior independent of temperature
    • Dedicated to PFC applications
    • AEC-Q101 qualified
    • PPAP capable
    • ECOPACK®2 compliant component