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STPSC40H12CWL

1200 V, 40 A High Surge Silicon Carbide Power Schottky Diode

Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247 long leads

The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is...
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Key features
  • None or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high voltage periphery
  • Operating Tj from -40 °C to 175 °C
  • ECOPACK2 compliant component
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Quantity $ per unit Savings
1-9$13.660%
10-47$12.846%
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$13.66
$13.66
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247 long leads

The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is...
Read More

Key features
  • None or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high voltage periphery
  • Operating Tj from -40 °C to 175 °C
  • ECOPACK2 compliant component