Exclusive FREE shipping offer of Embedded World prodcuts!
Use code
EV-EW2025-FREESHIP-03
at checkout!
🛒
Order now!
Active
STPSC40H12CWY
2x20A 1200V Power Schottky Silicon Carbide Diode Automotive
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Automotive |
| Package Name | HIP247 |
The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.Due to the Schottky construction, no recovery is...
Read More
|
In stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $17.88 | 0% |
| 10-24 | $13.47 | 25% |
| 25-49 | $13.46 | 25% |
| 50-99 | $13.44 | 25% |
| 100-500 | $10.96 | 39% |
| 500 + | Contact sales | |
$17.88
$17.88
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Automotive |
| Package Name | HIP247 |
The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.Due to the Schottky construction, no recovery is...
Read More
|