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STPSC4G065UF

650 V, 4A power Schottky High Surge silicon carbide diode

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack3
GradeIndustrial
Package NameSMBFlat

The SiC diode, available in SMB-Flat, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Thanks to the Schottky construction, no recovery...
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Key features
  • None or negligible reverse recovery charge in application current range
  • Switching behaviour independent of temperature
  • High forward surge capability
  • Operating Tj from -55 °C to +175 °C
  • ECOPACK2 compliant component
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ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack3
GradeIndustrial
Package NameSMBFlat

The SiC diode, available in SMB-Flat, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Thanks to the Schottky construction, no recovery...
Read More

Key features
  • None or negligible reverse recovery charge in application current range
  • Switching behaviour independent of temperature
  • High forward surge capability
  • Operating Tj from -55 °C to +175 °C
  • ECOPACK2 compliant component