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STPSC4G065UF
650 V, 4A power Schottky High Surge silicon carbide diode
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack3 |
| Grade | Industrial |
| Package Name | SMBFlat |
The SiC diode, available in SMB-Flat, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Thanks to the Schottky construction, no recovery...
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $2.23 | 0% |
| 10-99 | $1.43 | 36% |
| 100-499 | $0.99 | 56% |
| 500 | $0.84 | 63% |
| 500 + | Contact sales | |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack3 |
| Grade | Industrial |
| Package Name | SMBFlat |
The SiC diode, available in SMB-Flat, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Thanks to the Schottky construction, no recovery...
Read More
|