STPSC4H065DLF Active
Free
4 A, 650 V SiC Power Schottky Diode
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| ROHS Compliance Grade | Ecopack2 |
| Grade | Industrial |
| Package Name | PowerFLAT 8x8 HV |
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This 4 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Qualified in low profile package, the STPSC4H065DLF in PowerFLAT™8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as Telecom & Network, Industrial or Renewable energy domains.
In stock:
$1.72
| Range | Unit Price | Savings |
|---|---|---|
| 1 - 9 | $1.72 | 0% |
| 10 - 99 | $1.45 | 16% |
| 100 - 499 | $1.10 | 36% |
| 500 | $0.96 | 44% |
| 500 + | Contact Sales | |