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STPSC4H065DLF

4 A, 650 V SiC Power Schottky Diode

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NamePOWER FLAT MLPD 8X8 4L MIXPLANT

This 4 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
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Key features
  • Less than 1 mm height package
  • High creepage package
  • No or negligible reverse recovery
  • Temperature independent switching behavior
  • High forward surge capability
  • Low drop forward voltage
  • Power efficient product
  • ECOPACK2 compliant component
In stock
Quantity $ per unit Savings
1-9$2.320%
10-99$1.9616%
100-499$1.6131%
500$1.4040%
Contact sales
$2.32
$2.32
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NamePOWER FLAT MLPD 8X8 4L MIXPLANT

This 4 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
Read More

Key features
  • Less than 1 mm height package
  • High creepage package
  • No or negligible reverse recovery
  • Temperature independent switching behavior
  • High forward surge capability
  • Low drop forward voltage
  • Power efficient product
  • ECOPACK2 compliant component