This 6 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Qualified in low profile package, the STPSC6H065DLF in PowerFLAT™8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as Telecom & Network, Industrial or Renewable energy domains.