STPSC6H065DLF Active
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6 A, 650 V SiC Power Schottky Diode
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NamePowerFLAT 8x8 HV
Key Features
  • Less-than-1mm height package
  • High creepage package
  • No or negligible reverse recovery
  • Temperature independent switching behavior
  • High forward surge capability
  • Low drop forward voltage
  • Power efficient product
  • ECOPACK®2 compliant component

This 6 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.


Qualified in low profile package, the STPSC6H065DLF in PowerFLAT™8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as Telecom & Network, Industrial or Renewable energy domains.

In stock:
$2.11
or
Range Unit Price Savings
1 - 9$2.110%
10 - 99$1.7915%
100 - 499$1.3635%
500$1.1844%
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