JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.
📢Shop now for EEPROM products with FREE SHIPPING code EEPROM-M95-FREESHIP. Check out our M95P32-IXCST/EF and M95P16-IXMNT/E today!
This 6 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Qualified in low profile package, the STPSC6H065DLF in PowerFLAT 8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom and network, industrial or renewable energy domains.
