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    STR2P3LLH6

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    P-Channel 30 V, 0.048 Ohm typ., 2 A STripFET H6 Power MOSFET in a SOT-23 package
    Learn More about STR2P3LLH6

    Quantity $ per Unit Savings
    1 - 9$0.550%
    10 - 99$0.4518%
    100 - 499$0.3144%
    500$0.2358%
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    Parameter NameParameter Value
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    ROHS Compliance GradeEcopack2
    GradeIndustrial
    Package NameSOT-23

    This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

    Key features
    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss