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STR2P3LLH6

Active

P-Channel 30 V, 0.048 Ohm typ., 2 A STripFET H6 Power MOSFET in a SOT-23 package

Quantity $ per Unit Savings
1 - 9$0.550%
10 - 99$0.4518%
100 - 499$0.3144%
500$0.2358%
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Out of stock
$0.55
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameSOT-23

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key features
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss