STS9P3LLH6

Active

P-channel -30 V, 12 mOhm typ., -9 A, STripFET H6 Power MOSFET in a SO-8 package

Quantity $ per Unit Savings
1 - 9$0.950%
10 - 99$0.8412%
100 - 499$0.6433%
500$0.5147%
Contact Sales
In stock
$0.95
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-8

This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key features
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss