STTH1506TPI

600 V, 15 A 3-lead tandem Hyperfast Boost Diode

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	TOP3 Ins

Description

The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dI_F/dt.

Key features

Key features
C = 7pF Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions. Internal ceramic insulated devices with equal thermal conditions for both 300V diodes. Designed for high di/dt operation. Hyperfast recovery current to compete with GaAs devices. Allows downsizing of mosfet and heatsinks. Matched diodes for typical PFC application without need for voltage balance network. Insulation (2500V RMS) allows placement on same heatsink as mosfet and flexible heatsinking on common or separate heatsink.

In stock

Quantity	$ per unit	Savings
1-9	$3.93	0%
10-24	$3.87	2%
25-99	$2.04	48%
100-249	$2.02	49%
250-500	$1.75	55%
500 +	Contact sales

$3.93

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	TOP3 Ins

Description

The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dI_F/dt.

Key features

Key features
C = 7pF Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions. Internal ceramic insulated devices with equal thermal conditions for both 300V diodes. Designed for high di/dt operation. Hyperfast recovery current to compete with GaAs devices. Allows downsizing of mosfet and heatsinks. Matched diodes for typical PFC application without need for voltage balance network. Insulation (2500V RMS) allows placement on same heatsink as mosfet and flexible heatsinking on common or separate heatsink.