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STTH1506TPI

600 V, 15 A 3-lead tandem Hyperfast Boost Diode

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTOP3 Ins

The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt.

Key features
  • C = 7pF
  • Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions.
  • Internal ceramic insulated devices with equal thermal conditions for both 300V diodes.
  • Designed for high di/dt operation. Hyperfast recovery current to compete with GaAs devices. Allows downsizing of mosfet and heatsinks.
  • Matched diodes for typical PFC application without need for voltage balance network.
  • Insulation (2500V RMS) allows placement on same heatsink as mosfet and flexible heatsinking on common or separate heatsink.
In stock
Quantity $ per unit Savings
1-9$4.430%
10-99$2.0953%
100-249$2.0254%
250-500$1.7560%
Contact sales
$4.43
$4.43
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTOP3 Ins

The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt.

Key features
  • C = 7pF
  • Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions.
  • Internal ceramic insulated devices with equal thermal conditions for both 300V diodes.
  • Designed for high di/dt operation. Hyperfast recovery current to compete with GaAs devices. Allows downsizing of mosfet and heatsinks.
  • Matched diodes for typical PFC application without need for voltage balance network.
  • Insulation (2500V RMS) allows placement on same heatsink as mosfet and flexible heatsinking on common or separate heatsink.