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    📢 Limited time offer – Buy One Get One Free on Intelligent Power Switch boards. Use code DV-IPS-BOGO-12 at checkout! Order now

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    STTH806DTI

    600 V, 8 A 2-lead tandem Hyperfast Boost Diode

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-220AC Ins
    Description

    The TURBOSWITCH \H\ is an ultra high performance diode composed of two 300 V dice in series. TURBOSWITCH \H\ family drastically cuts losses in the associated MOSFET when run at high dIF/dt.

    Key features
    Key features
    • Package Capacitance: C = 7 pF
    • Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions
    • Internal ceramic insulated devices with equal thermal conditions for both 300 V diodes
    • Designed for high di/dt operation. Hyperfast recovery current to compete with SiC devices. Allows downsizing of mosfet and heatsinks
    • Static and dynamic equilibrium of internal diodes are warranted by design
    • Insulation (2500 VRMS) allows placement on same heatsink as mosfet and flexible heatsinking on common or separate heatsink
    In stock
    Quantity $ per unit Savings
    1-9$1.880%
    10-68$1.0445%
    68 + Contact sales
    $1.88
    $1.88
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-220AC Ins
    Description

    The TURBOSWITCH \H\ is an ultra high performance diode composed of two 300 V dice in series. TURBOSWITCH \H\ family drastically cuts losses in the associated MOSFET when run at high dIF/dt.

    Key features
    Key features
    • Package Capacitance: C = 7 pF
    • Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions
    • Internal ceramic insulated devices with equal thermal conditions for both 300 V diodes
    • Designed for high di/dt operation. Hyperfast recovery current to compete with SiC devices. Allows downsizing of mosfet and heatsinks
    • Static and dynamic equilibrium of internal diodes are warranted by design
    • Insulation (2500 VRMS) allows placement on same heatsink as mosfet and flexible heatsinking on common or separate heatsink