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NRND
N-channel 800 V, 2.8 Ohm typ., 2.5 A MDmesh K5 Power MOSFET in an IPAK package
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.