STU3N80K5

Active

N-channel 800 V, 2.8 Ohm typ., 2.5 A MDmesh K5 Power MOSFET in an IPAK package

Quantity $ per Unit Savings
1 - 9$1.660%
10 - 99$1.4910%
100 - 499$1.1730%
500$0.9642%
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In stock
$1.66
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameIPAK

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key features
  • Industry’s lowest RDS(on) x area
  • Industry’s best FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected