STW24N60DM2

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N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-247 package

Quantity $ per Unit Savings
1 - 9$4.570%
10 - 24$4.1210%
25 - 99$3.8915%
100 - 500$3.3726%
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$4.57
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Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247

These FDmesh II Plus™ low QgPower MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Key features
  • Extremely low gate charge and input capacitance
  • Lower RDS(on)x area vs previous generation
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected
  • Extremely high dv/dt and avalanche capabilities