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STW4N150

Active

N-channel 1500 V, 5 Ohm, 4 A, PowerMESH(TM) power MOSFET in TO-247

Quantity $ per Unit Savings
1 - 9$8.900%
10 - 24$8.0510%
25 - 99$7.6714%
100 - 500$6.6625%
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Out of stock
$8.90
Parameter NameParameter Value
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius150.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247

Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.


The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.

Key features
  • 100% avalanche tested
  • High speed switching
  • Intrinsic capacitances and Qg minimized
  • Creepage distance path is 5.4 mm (typ.) for TO-3PF
  • Fully isolated TO-3PF plastic packages