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STW65N045M9-4

N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET in a TO247-4 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO247-4

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure....
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Key features
  • Worldwide best FOM RDS(on)*Qg among silicon-based devices
  • Higher VDSS rating
  • Higher dv/dt capability
  • Excellent switching performance thanks to the extra driving source pin
  • Easy to drive
  • 100% avalanche tested
In stock
Quantity $ per unit Savings
1-9$10.710%
10-29$9.4412%
30-50$9.1814%
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$10.71
$10.71
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ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO247-4

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure....
Read More

Key features
  • Worldwide best FOM RDS(on)*Qg among silicon-based devices
  • Higher VDSS rating
  • Higher dv/dt capability
  • Excellent switching performance thanks to the extra driving source pin
  • Easy to drive
  • 100% avalanche tested