VD55G0CCA1/RW

VD55G0 640x600 monochrome global shutter CMOS image sensor die in reconstructed wafer

Parameters

Operating Temp Min Celsius	-30.0
Operating Temp Max Celsius	85.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape Mounted
RoHs compliant	N/A
Grade	Industrial
Package Name	DIE

Description

The VD55G0 is a global shutter image sensor with high BSI performance which captures up to 210 frames per second in a 644 x 604 resolution format. The pixel construction of this device minimizes crosstalk while enabling a high quantum efficiency (QE) in the near infrared spectrum.

Key features

Key features
Global shutter technology, STMicroelectronics proprietary single layer 3D stacked sensor 40 nm/65 nm 2.61 µm x 2.61 µm BSI pixel with full CDTI (capacitive deep trench) High performance with excellent QE (quantum efficiency) MTF (modulation transfer function) up to near IR Perfect PLS (shutter efficiency) Smallest sensor on market with: Compact die size: 2.6 mm x 2.5 mm 640 pixel x 600 pixel resolution Very small pixel array, 1.67 mm x 1.57 mm Optical format between 1/9 inch Operating junction temperature: -30°C to 85°C Single lane transmitter MIPI CSI-2 (copyright© 2005-2010 MIPI Alliance, Inc. Standard for camera serial interface 2 (CSI-2) version 1.0) version 1.3, 1.2 Gbps per lane Fast mode+ I²C control interface Integrated temperature sensor Up to 210 fps (frames per second) at full resolution and 260 fps with VGA resolution Programmable sequences of 4-frame contexts, including frame parameters Automatic dark calibration Dynamic defective correction Embedded auto-exposure 4 multiple function IO, dynamically programmable with frame contexts (GPIO, strobe pulse, pulse-width modulation, V sync) Up to 4 illumination control outputs, synchronized with sensor integration periods and leader or follower external frame start Mirror/flip readout Fully sequenceable with frame contexts Crop Binning (x2 and x4) Analog binning: 320x240 @ 500 fps, 320x252 @ 480 fps, 320x300 @ 414 fps Subsampling (x2 and x4)

Out of Stock

Parameters

Operating Temp Min Celsius	-30.0
Operating Temp Max Celsius	85.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape Mounted
RoHs compliant	N/A
Grade	Industrial
Package Name	DIE

Description

Key features

Key features
Global shutter technology, STMicroelectronics proprietary single layer 3D stacked sensor 40 nm/65 nm 2.61 µm x 2.61 µm BSI pixel with full CDTI (capacitive deep trench) High performance with excellent QE (quantum efficiency) MTF (modulation transfer function) up to near IR Perfect PLS (shutter efficiency) Smallest sensor on market with: Compact die size: 2.6 mm x 2.5 mm 640 pixel x 600 pixel resolution Very small pixel array, 1.67 mm x 1.57 mm Optical format between 1/9 inch Operating junction temperature: -30°C to 85°C Single lane transmitter MIPI CSI-2 (copyright© 2005-2010 MIPI Alliance, Inc. Standard for camera serial interface 2 (CSI-2) version 1.0) version 1.3, 1.2 Gbps per lane Fast mode+ I²C control interface Integrated temperature sensor Up to 210 fps (frames per second) at full resolution and 260 fps with VGA resolution Programmable sequences of 4-frame contexts, including frame parameters Automatic dark calibration Dynamic defective correction Embedded auto-exposure 4 multiple function IO, dynamically programmable with frame contexts (GPIO, strobe pulse, pulse-width modulation, V sync) Up to 4 illumination control outputs, synchronized with sensor integration periods and leader or follower external frame start Mirror/flip readout Fully sequenceable with frame contexts Crop Binning (x2 and x4) Analog binning: 320x240 @ 500 fps, 320x252 @ 480 fps, 320x300 @ 414 fps Subsampling (x2 and x4)