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VD55H1CCA0/RW

Low power, low noise 3D iToF 0.5 Mpix sensor die

Operating Temp Min Celsius-30.0
Operating Temp Max Celsius85.0
ECCN USEAR99
ECCN EUNEC
Package Size4.5 x 4.9
Packing TypeTape Mounted
RoHs compliantN/A
GradeIndustrial
Package NameGOOD DIE

The VD55H1 is a low-noise, low-power, 672 x 804 pixel (0.54 Mpix), indirect Time-of-Flight (iToF) sensor die manufactured on advanced backside-illuminated, stacked wafer technology. Combined with a 940 nm illumination system, it enables building a small form-factor 3D camera producing a...
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Key features
  • Ultra-compact 0.54 Mpix iToF sensor die
    • 672 x 804 indirect Time-of-Flight (iToF) sensor die (0.54 Mpixel)
    • 4.6 μm backside illuminated fast photodiode pixel, 1/4’’ optical format
    • 4.5 mm x 4.9 mm die manufactured on advanced 40 nm stacked wafer technology
  • Enabling low-power, high precision depth map
    • Pixel with >85% demodulation contrast at 200 MHz modulation frequency
    • Low noise charge domain pixel (kTC free) < 5e-
    • Multifrequency supported (up to three frequencies)
    • Average sensor power consumption down to 80 mW
    • Smart iToF modulation, no need for wiggling error calibration
    • Multi-user interferences reduction
    • Optimized for low EMI/EMC
  • Easy integration for 3D camera
    • Raw data output on MIPI CSI2 interface at 1.5 GHz (quad or dual lane)
    • 10/12-bit configurable ADC resolution
    • Sensor raw output up to 120 fps (depth-level frame rate)
    • Sensor control: Fast mode+ I2C slave interface (up to 1 MHz)
    • Laser driver interface: LVDS and 3-wire SPI
    • Software ISP for depth reconstruction available
Out of Stock
Quantity $ per unit Savings
1-9$15.260%
10-24$14.028%
25-99$13.4512%
100-249$11.8522%
250-499$11.2626%
500$10.5431%
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$15.26
Operating Temp Min Celsius-30.0
Operating Temp Max Celsius85.0
ECCN USEAR99
ECCN EUNEC
Package Size4.5 x 4.9
Packing TypeTape Mounted
RoHs compliantN/A
GradeIndustrial
Package NameGOOD DIE

The VD55H1 is a low-noise, low-power, 672 x 804 pixel (0.54 Mpix), indirect Time-of-Flight (iToF) sensor die manufactured on advanced backside-illuminated, stacked wafer technology. Combined with a 940 nm illumination system, it enables building a small form-factor 3D camera producing a...
Read More

Key features
  • Ultra-compact 0.54 Mpix iToF sensor die
    • 672 x 804 indirect Time-of-Flight (iToF) sensor die (0.54 Mpixel)
    • 4.6 μm backside illuminated fast photodiode pixel, 1/4’’ optical format
    • 4.5 mm x 4.9 mm die manufactured on advanced 40 nm stacked wafer technology
  • Enabling low-power, high precision depth map
    • Pixel with >85% demodulation contrast at 200 MHz modulation frequency
    • Low noise charge domain pixel (kTC free) < 5e-
    • Multifrequency supported (up to three frequencies)
    • Average sensor power consumption down to 80 mW
    • Smart iToF modulation, no need for wiggling error calibration
    • Multi-user interferences reduction
    • Optimized for low EMI/EMC
  • Easy integration for 3D camera
    • Raw data output on MIPI CSI2 interface at 1.5 GHz (quad or dual lane)
    • 10/12-bit configurable ADC resolution
    • Sensor raw output up to 120 fps (depth-level frame rate)
    • Sensor control: Fast mode+ I2C slave interface (up to 1 MHz)
    • Laser driver interface: LVDS and 3-wire SPI
    • Software ISP for depth reconstruction available