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    NRND

    ADP480120W3-L

    Automotive-grade ACEPACK DRIVE power module, sixpack topology 1200 V, 1.9 mOhm typ. SiC MOSFET gen.3 based

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Package Size154.5 x 142.5
    Packing TypeTray
    RoHs compliantEcopack1
    GradeAutomotive
    Package NameACEPACK DRIVE
    Description

    The ACEPACK DRIVE is a compact sixpack module optimized for hybrid and electric vehicles traction inverter. This power module features switches based on silicon carbide Power MOSFET 3rd generation, are characterized by very low RDS(on), very limited switching losses and outstanding performances in...
    Read More

    Key features
    Key features
    • AQG 324 qualified
    • 1200 V blocking voltage
    • 1.9 mΩ of typical RDS(on)
    • Maximum operative junction temperature TJ = 175 °C
    • Very low switching energy
    • Low inductive compact design for an higher power density
    • Si3N4 AMB substrate to improve thermal performance
    • SiC Power MOSFET chip sintered to substrate for improved lifetime
    • 4.2 kV DC 1 s insulation
    • Direct cooled Cu base plate with pin fins
    • Three integrated NTC temperature sensors
    • Long AC bus bar compatible with phase current sense
    In stock
    Quantity $ per unit Savings
    1-500$1,224.990%
    500 + Contact sales
    $1,224.99
    $1,224.99
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Package Size154.5 x 142.5
    Packing TypeTray
    RoHs compliantEcopack1
    GradeAutomotive
    Package NameACEPACK DRIVE
    Description

    The ACEPACK DRIVE is a compact sixpack module optimized for hybrid and electric vehicles traction inverter. This power module features switches based on silicon carbide Power MOSFET 3rd generation, are characterized by very low RDS(on), very limited switching losses and outstanding performances in...
    Read More

    Key features
    Key features
    • AQG 324 qualified
    • 1200 V blocking voltage
    • 1.9 mΩ of typical RDS(on)
    • Maximum operative junction temperature TJ = 175 °C
    • Very low switching energy
    • Low inductive compact design for an higher power density
    • Si3N4 AMB substrate to improve thermal performance
    • SiC Power MOSFET chip sintered to substrate for improved lifetime
    • 4.2 kV DC 1 s insulation
    • Direct cooled Cu base plate with pin fins
    • Three integrated NTC temperature sensors
    • Long AC bus bar compatible with phase current sense