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High bandwidth (20 MHz) low offset (200 µV) rail-to-rail 5 V op amp
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N-channel 800 V, 0.300 Ohm typ., 14 A MDmesh K5 Power MOSFET in a TO-220 package
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Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
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N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MOSFET in D2PAK package
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Automotive CMF with ESD protection and 2.2 GHz bandwidth in QFN-10L