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N-channel 800 V, 0.8 Ohm typ., 6 A MDmesh K5 Power MOSFET in TO-220 package
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Automotive-grade, very high accuracy (70 uV), high bandwidth (3 MHz), high temperature (175 °C)
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Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO-247 long leads package
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N-channel 800 V, 0.8 Ohm typ., 6 A MDmesh K5 Power MOSFET in TO-220FP package
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256-Kbit serial SPI bus EEPROM with high speed clock 105°C operation
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Automotive-grade ACEPACK DMT-32 power module, fourpack topology, 1200 V, 47.5 mOhm typ. SiC Power MO