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N-channel 500 V, 300 mOhm typ., 12 A MDmesh Power MOSFET in a TO-220FP package
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Automotive 1200 V, 20A power Schottky High Surge silicon carbide diode
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N-channel 800 V, 0.65 Ohm typ., 10.5 A SuperMESH Power MOSFET in a TO-220 package
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GSMA eSIM system-on-chip for secure M2M industrial applications