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Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
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Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 package
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MPU with Arm Dual Cortex-A7 800 MHz, Arm Cortex-M4 real-time coprocessor, 3D GPU, TFT/MIPI DSI displ
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N-channel 900 V, 720 mOhm typ., 7 A MDmesh K5 Power MOSFET in a DPAK package
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Rail-to-rail input/output 5V CMOS Op-Amp, micro-power (29uA), GBP=1.3MHz, small offset, single
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Wide-bandwidth (8 MHz) rail-to-rail input/output 5 V CMOS dual operational amplifier