Energy Generation and Distribution
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N-channel 650 V, 365 mOhm typ., 6.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package
- Ecopack2
- PowerFLAT 5x6 HV
- EAR99
- NEC
-
In Stock
Galvanically isolated 4 A single gate driver
- 125.0
- Ecopack2
- -40.0
- SO-8
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300 mA low quiescent current very low noise LDO (automotive for SOT23-5L package)
- 125.0
- Ecopack2
- -40.0
- DFN6 1.2x1.3
-
In Stock
650 V, 10 A High Surge Silicon Carbide Power Schottky Diode
- Ecopack2
- TO-220AC
- EAR99
- NEC
-
In Stock
Trench gate field-stop 600 V, 30 A high speed HB series IGBT
- 175.0
- Ecopack2
- -55.0
- D2PAK
-
In Stock
Adjustable Voltage Reference
- 105.0
- Ecopack2
- -40.0
- TO-92
-
In Stock
Ultra-low-power dual core Arm Cortex-M4 MCU 64 MHz, Cortex-M0+ 32 MHz with 1 Mbyte of Flash memory,
- 85.0
- Ecopack2
- -40.0
- UFQFPN 48 7x7x0.55 mm
-
In Stock
600 V, 8 A Turbo 2 Ultrafast Diode
- Ecopack2
- TO-220AC
- EAR99
- NEC
-
In Stock
Mainstream Arm Cortex-M0+ MCU with 64 Kbytes of Flash memory, 8 Kbytes RAM, 64 MHz CPU, 2x USART, ti
- 85.0
- Ecopack2
- -40.0
- UFQFPN 32 5x5x0.55 mm
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Mainstream Arm Cortex-M4 MCU 170 MHz with 128 Kbytes of Flash memory, Math Accelerator, Medium Analo
- 125.0
- Ecopack2
- -40.0
- WLCSP 49 3.2x3.2x0.6 P 0.4 mm
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