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600 V half-bridge enhancement mode GaN HEMT with high voltage driver
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N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package
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12V/8A, active clamp forward converter, Power Over Ethernet (PoE) IEEE 802.3bt compliant reference d
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Automotive 8-bit MCU with 16 Kbytes Flash, LIN, 16 MHz CPU, integrated EEPROM
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N-channel 650 V - 1 Ohm - 6.4 A TO-220FP Zener-protected SuperMESH(TM) Power MOSFET
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High-performance foundation line, Arm Cortex-M4 core with DSP and FPU, 1 Mbyte of Flash memory, 168