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600 V half-bridge enhancement mode GaN HEMT with high voltage driver
Operating Temp Min Celsius | -40.0 |
Operating Temp Max Celsius | 125.0 |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tray |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | VFQFPN 9X9X1.0 31L PITCH 0.6MM |
The MASTERGAN1L is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration.The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be...
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Quantity | $ per unit | Savings |
---|---|---|
1-9 | $9.67 | 0% |
10-24 | $7.25 | 25% |
25-99 | $6.92 | 28% |
100-249 | $6.01 | 38% |
250-499 | $5.73 | 41% |
500 | $5.23 | 46% |
500 + |
Contact sales |
Operating Temp Min Celsius | -40.0 |
Operating Temp Max Celsius | 125.0 |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tray |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | VFQFPN 9X9X1.0 31L PITCH 0.6MM |
The MASTERGAN1L is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration.The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be...
Read More
|