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STM6822YAWY6F

STM6822YAWY6F

MASTERGAN1LTR

MASTERGAN1LTR

Active

MASTERGAN1L

600 V half-bridge enhancement mode GaN HEMT with high voltage driver

Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTray
RoHs compliantEcopack2
GradeIndustrial
Package NameVFQFPN 9X9X1.0 31L PITCH 0.6MM

The MASTERGAN1L is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration.The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be...
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Key features
  • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors:
    • QFN 9 x 9
      x 1 mm package
    • RDS(ON)
      = 150 mΩ
    • IDS(MAX)
      = 10 A
  • Reverse current capability
  • Zero reverse recovery loss
  • UVLO protection on VCC
  • Internal bootstrap diode
  • Interlocking function
  • Dedicated pin for shutdown functionality
  • Accurate internal timing match
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Overtemperature protection
  • Bill of material reduction
  • Very compact and simplified layout
  • Flexible, easy and fast design.
  • Ultra short wake up time, less than 200 ns
Out of Stock
Quantity $ per unit Savings
1-9$9.360%
10-24$8.4510%
25-99$8.0614%
100-249$7.0025%
250-499$6.6829%
500$6.0935%
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$9.36
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTray
RoHs compliantEcopack2
GradeIndustrial
Package NameVFQFPN 9X9X1.0 31L PITCH 0.6MM

The MASTERGAN1L is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration.The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be...
Read More

Key features
  • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors:
    • QFN 9 x 9
      x 1 mm package
    • RDS(ON)
      = 150 mΩ
    • IDS(MAX)
      = 10 A
  • Reverse current capability
  • Zero reverse recovery loss
  • UVLO protection on VCC
  • Internal bootstrap diode
  • Interlocking function
  • Dedicated pin for shutdown functionality
  • Accurate internal timing match
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Overtemperature protection
  • Bill of material reduction
  • Very compact and simplified layout
  • Flexible, easy and fast design.
  • Ultra short wake up time, less than 200 ns