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Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 package
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Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
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Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
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N-channel 500 V, 1.22 Ohm typ., 4.4 A SuperMESH Power MOSFET in DPAK package
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N-channel 600 V, 0.9 Ohm typ., 8 A MDmesh Power MOSFET in a D2PAK package
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N-channel 100 V, 0.062 Ohm typ., 4 A STripFET F7 Power MOSFET in a PowerFLAT 2x2 package
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N-channel 1500 V, 5 Ohm typ., 4 A PowerMESH Power MOSFET in a TO-220 package
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N-channel 600 V, 4 Ohm typ., 2 A, SuperMESH3(TM) Power MOSFET in DPAK package
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STM32 Dynamic Efficiency MCU, Arm Cortex-M4 core with DSP and FPU, up to 512 Kbytes of Flash memory,