BUL1102EFP

BUL1102EFP

BUL1102E

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High voltage fast-switching NPN power transistor

Quantity $ per Unit Savings
1 - 9$1.480%
10 - 24$1.3310%
25 - 99$1.2615%
100 - 499$1.0430%
500$0.8642%
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In stock
$1.48
Parameter NameParameter Value
Operating RangeIndustrial
Operating Temp Min Celsius-65.0
Operating Temp Max Celsius150.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220

This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.


Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transilâ„¢ protection usually necessary in typical converters for lamp ballast.

Key features
  • High voltage capability
  • Very high switching speed