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BULD118D-1

Active

High voltage fast-switching NPN power transistor

Quantity $ per Unit Savings
1 - 9$0.970%
10 - 99$0.8512%
100 - 499$0.6533%
500$0.5247%
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Out of stock
$0.97
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameIPAK

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.


It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.


The device is designed for use in lighting applications and low cost switch-mode power supplies.

Key features
  • INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE
  • LOW SPREAD OF DYNAMIC PARAMETERS
  • HIGH VOLTAGE CAPABILITY
  • VERY HIGH SWITCHING SPEED
  • MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION