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    EVSTDRIVEG60015

    Demonstration board for STDRIVEG600 600V high speed half-bridge gate driver with SGT120R65AL enhancement mode GaN HEMT

    Parameters
    Core ProductSTDRIVEG600, SGT120R65AL
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The STDRIVEG600 is a high-speed half-bridge gate driver optimized to drive high-voltage enhanced mode GaN HEMTs. It features an integrated bootstrap diode and allows supplying external switches up to 20 V, with undervoltage protection tailored for GaN HEMTs.The EVSTDRIVEG60015 board is easy to use...
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    Key features
    Key features
    • Half-Bridge topology featuring 600 V STDRIVEG600 gate driver
    • Equipped with 75 mΩ typ, 650 V e-mode GaN HEMT
    • GaN in 5x6 mm PowerFLAT HV package with Kelvin source
    • HV bus up to 500 V
    • 4.75 to 6.5 V VCC gate driver supply voltage, limited by GaN VGS rating
    • On-board adjustable deadtime generator to convert single PWM signal in independent High-Side and Low-Side deadtimes
    • Separated inputs with external deadtime can also be used
    • On-board 3.3 V regulator for external circuitry supply
    • 25° C/W junction-to-ambient thermal resistance to evaluate large power topologies
    • High frequency connector for GaN gate monitoring
    • Optional low-side shunt
    • RoHS compliant.
    In stock
    Quantity $ per unit Savings
    1-10$128.630%
    10 + Contact sales
    $128.63
    $128.63
    Parameters
    Core ProductSTDRIVEG600, SGT120R65AL
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The STDRIVEG600 is a high-speed half-bridge gate driver optimized to drive high-voltage enhanced mode GaN HEMTs. It features an integrated bootstrap diode and allows supplying external switches up to 20 V, with undervoltage protection tailored for GaN HEMTs.The EVSTDRIVEG60015 board is easy to use...
    Read More

    Key features
    Key features
    • Half-Bridge topology featuring 600 V STDRIVEG600 gate driver
    • Equipped with 75 mΩ typ, 650 V e-mode GaN HEMT
    • GaN in 5x6 mm PowerFLAT HV package with Kelvin source
    • HV bus up to 500 V
    • 4.75 to 6.5 V VCC gate driver supply voltage, limited by GaN VGS rating
    • On-board adjustable deadtime generator to convert single PWM signal in independent High-Side and Low-Side deadtimes
    • Separated inputs with external deadtime can also be used
    • On-board 3.3 V regulator for external circuitry supply
    • 25° C/W junction-to-ambient thermal resistance to evaluate large power topologies
    • High frequency connector for GaN gate monitoring
    • Optional low-side shunt
    • RoHS compliant.
    Associated products