EVSTDRIVEG60015

Demonstration board for STDRIVEG600 600 V high speed half-bridge gate driver with 75mΩ, 650 V e-mode GaN HEMT

Parameters

Core Product	STDRIVEG600
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Not Applicable
RoHs compliant	Ecopack1
Grade	Industrial
Package Name	CARD

Description

The STDRIVEG600 is a high-speed half-bridge gate driver optimized to drive high-voltage enhanced mode GaN HEMTs.It features separated high current sink/source gate driving pins, an integrated bootstrap diode, overtemperature, and allows supplying external switches up to 20 V, with undervoltage...
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Key features

Key features
Half-Bridge topology featuring 600 V STDRIVEG600 gate driver Equipped with 75 mΩ typ, 650 V e-mode GaN HEMT GaN in 5x6 mm PowerFLAT HV package with Kelvin source HV bus up to 500 V Tunable hard-on and hard-off dV/dt 4.75 to 6.5 V VCC gate driver supply voltage, limited by GaN V_GS rating On-board adjustable deadtime generator to convert single PWM signal in independent High-Side and Low-Side deadtimes Separated inputs with external deadtime can also be used On-board 3.3 V regulator for external circuitry supply 25° C/W junction-to-ambient thermal resistance to evaluate large power topologies High frequency connector for GaN gate monitoring Optional low-side shunt RoHS compliant.

In stock

Quantity	$ per unit	Savings
1-2	$128.62	0%
2 +	Contact sales

$128.62

Parameters

Core Product	STDRIVEG600
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Not Applicable
RoHs compliant	Ecopack1
Grade	Industrial
Package Name	CARD

Description

Key features

Key features
Half-Bridge topology featuring 600 V STDRIVEG600 gate driver Equipped with 75 mΩ typ, 650 V e-mode GaN HEMT GaN in 5x6 mm PowerFLAT HV package with Kelvin source HV bus up to 500 V Tunable hard-on and hard-off dV/dt 4.75 to 6.5 V VCC gate driver supply voltage, limited by GaN V_GS rating On-board adjustable deadtime generator to convert single PWM signal in independent High-Side and Low-Side deadtimes Separated inputs with external deadtime can also be used On-board 3.3 V regulator for external circuitry supply 25° C/W junction-to-ambient thermal resistance to evaluate large power topologies High frequency connector for GaN gate monitoring Optional low-side shunt RoHS compliant.