EVSTDRIVEG60015

Demonstration board for STDRIVEG600 600V high speed half-bridge gate driver with SGT120R65AL enhancement mode GaN HEMT

Parameters

Core Product	STDRIVEG600, SGT120R65AL
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Not Applicable
RoHs compliant	Ecopack1
Grade	Industrial
Package Name	CARD

Description

The STDRIVEG600 is a high-speed half-bridge gate driver optimized to drive high-voltage enhanced mode GaN HEMTs. It features an integrated bootstrap diode and allows supplying external switches up to 20 V, with undervoltage protection tailored for GaN HEMTs.The EVSTDRIVEG60015 board is easy to use...
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Key features

Key features
Half-Bridge topology featuring 600 V STDRIVEG600 gate driver Equipped with 75 mΩ typ, 650 V e-mode GaN HEMT GaN in 5x6 mm PowerFLAT HV package with Kelvin source HV bus up to 500 V 4.75 to 6.5 V VCC gate driver supply voltage, limited by GaN V_GS rating On-board adjustable deadtime generator to convert single PWM signal in independent High-Side and Low-Side deadtimes Separated inputs with external deadtime can also be used On-board 3.3 V regulator for external circuitry supply 25° C/W junction-to-ambient thermal resistance to evaluate large power topologies High frequency connector for GaN gate monitoring Optional low-side shunt RoHS compliant.

In stock

Quantity	$ per unit	Savings
1-2	$128.63	0%
2 +	Contact sales

$128.63

Parameters

Core Product	STDRIVEG600, SGT120R65AL
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Not Applicable
RoHs compliant	Ecopack1
Grade	Industrial
Package Name	CARD

Description

Key features

Key features
Half-Bridge topology featuring 600 V STDRIVEG600 gate driver Equipped with 75 mΩ typ, 650 V e-mode GaN HEMT GaN in 5x6 mm PowerFLAT HV package with Kelvin source HV bus up to 500 V 4.75 to 6.5 V VCC gate driver supply voltage, limited by GaN V_GS rating On-board adjustable deadtime generator to convert single PWM signal in independent High-Side and Low-Side deadtimes Separated inputs with external deadtime can also be used On-board 3.3 V regulator for external circuitry supply 25° C/W junction-to-ambient thermal resistance to evaluate large power topologies High frequency connector for GaN gate monitoring Optional low-side shunt RoHS compliant.