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STDRIVEG600
High voltage half-bridge gate driver for GaN transistors
| Operating Range | Industrial |
| Operating Temp Min Celsius | -40.0 |
| Operating Temp Max Celsius | 150.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | SO-16 |
The STDRIVEG600 is a single chip half-bridge gate driver for Enhancement mode GaN FETs or N-channel power MOSFET.The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V.The device is designed for driving high-speed GaN and Si FETs...
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $2.16 | 0% |
| 10-99 | $1.43 | 34% |
| 100-249 | $1.40 | 35% |
| 250-499 | $1.32 | 39% |
| 500 | $1.28 | 41% |
| 500 + | Contact sales | |
| Operating Range | Industrial |
| Operating Temp Min Celsius | -40.0 |
| Operating Temp Max Celsius | 150.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | SO-16 |
The STDRIVEG600 is a single chip half-bridge gate driver for Enhancement mode GaN FETs or N-channel power MOSFET.The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V.The device is designed for driving high-speed GaN and Si FETs...
Read More
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