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EVSTGAP2SICSAC

Demonstration board for STGAP2SICSAC galvanically isolated single gate driver

ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantEcopack1
GradeIndustrial
Package NameCARD

The EVSTGAP2SICSAC is a half bridge evaluation board designed to evaluate the STGAP2SICSAC isolated single gate driverThe gate driver is characterized by 4 A current capability and rail-to-rail outputs, making the device also suitable for mid and high power inverter applications such as motor...
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Key features
  • Board
    • Half bridge
      configuration, high voltage rail up to 520 V
    • SCT055H65G3AG: 650 V, 58 mΩ typ., 30 A
      3rd generation SiC MOSFET
    • Negative gate
      driving
    • On-board
      isolated DC-DC converters to supply high-side and
      low-side gate drivers, fed by VAUX = 5 V, with 5.2
      kV maximum isolation
    • VDD logic
      supplied by on-board generated 3.3 V or VAUX = 5
      V
    • Easy jumper selection of driving
      voltage configuration: +17/0 V; +17/-3 V; +19/0
      V; +19/-3 V
  • Device
    • AEC-Q100
      qualified
    • High voltage rail up to
      1200 V
    • Driver current capability:
      4 A source/sink @ 25 °C
    • 4 A Miller CLAMP
    • Overall
      input-output propagation delay: 45 ns
    • UVLO
      function
    • Gate driving
      voltage up to 26 V
    • 3.3 V, 5 V
      TTL/CMOS inputs with hysteresis
    • Temperature
      shut down protection
    • 6 kV
      Galvanic isolation
    • UL 1577
      recognized
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$55.37
$55.37
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantEcopack1
GradeIndustrial
Package NameCARD

The EVSTGAP2SICSAC is a half bridge evaluation board designed to evaluate the STGAP2SICSAC isolated single gate driverThe gate driver is characterized by 4 A current capability and rail-to-rail outputs, making the device also suitable for mid and high power inverter applications such as motor...
Read More

Key features
  • Board
    • Half bridge
      configuration, high voltage rail up to 520 V
    • SCT055H65G3AG: 650 V, 58 mΩ typ., 30 A
      3rd generation SiC MOSFET
    • Negative gate
      driving
    • On-board
      isolated DC-DC converters to supply high-side and
      low-side gate drivers, fed by VAUX = 5 V, with 5.2
      kV maximum isolation
    • VDD logic
      supplied by on-board generated 3.3 V or VAUX = 5
      V
    • Easy jumper selection of driving
      voltage configuration: +17/0 V; +17/-3 V; +19/0
      V; +19/-3 V
  • Device
    • AEC-Q100
      qualified
    • High voltage rail up to
      1200 V
    • Driver current capability:
      4 A source/sink @ 25 °C
    • 4 A Miller CLAMP
    • Overall
      input-output propagation delay: 45 ns
    • UVLO
      function
    • Gate driving
      voltage up to 26 V
    • 3.3 V, 5 V
      TTL/CMOS inputs with hysteresis
    • Temperature
      shut down protection
    • 6 kV
      Galvanic isolation
    • UL 1577
      recognized