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EVSTGAP2SICSN

Demonstration board for STGAP2SICSN isolated 4 A single gate driver

Core ProductSTGAP2SICSN
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantEcopack1
GradeIndustrial
Package NameCARD

The EVSTGAP2SICSN is a half-bridge evaluation board designed to evaluate the STGAP2SICSN isolated single gate driver.The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making the device suitable also for high power inverter applications such as motor drivers in...
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Key features
  • Board
    • Half
      bridge configuration, high voltage rail up to 520
      V
    • SCTH35N65G2V-7: 650 V, 55 mΩ 2nd generation SiC
      MOSFET
    • Negative
      gate driving
    • On-board
      isolated DC-DC converters to supply high-side and
      low-side gate drivers, fed by VAUX = 5 V, with 5.2
      kV maximum isolation
    • VDD logic supplied by on-board generated 3.3 V or VAUX = 5
      V
    • Easy
      jumper selection of driving voltage configuration:
      +17/0 V; +17/-3 V; +19/0 V; +19/-3 V
  • Device
    • 1700 V functional isolation
    • Driver current capability: 4 A source/sink @
      25 °C
    • Separate sink and source output for easy gate driving
      configuration
    • Short propagation delay: 75 ns
    • UVLO function
    • Gate driving voltage up to 26 V
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Temperature shutdown protection
    • Standby function
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$51.40
Core ProductSTGAP2SICSN
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantEcopack1
GradeIndustrial
Package NameCARD

The EVSTGAP2SICSN is a half-bridge evaluation board designed to evaluate the STGAP2SICSN isolated single gate driver.The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making the device suitable also for high power inverter applications such as motor drivers in...
Read More

Key features
  • Board
    • Half
      bridge configuration, high voltage rail up to 520
      V
    • SCTH35N65G2V-7: 650 V, 55 mΩ 2nd generation SiC
      MOSFET
    • Negative
      gate driving
    • On-board
      isolated DC-DC converters to supply high-side and
      low-side gate drivers, fed by VAUX = 5 V, with 5.2
      kV maximum isolation
    • VDD logic supplied by on-board generated 3.3 V or VAUX = 5
      V
    • Easy
      jumper selection of driving voltage configuration:
      +17/0 V; +17/-3 V; +19/0 V; +19/-3 V
  • Device
    • 1700 V functional isolation
    • Driver current capability: 4 A source/sink @
      25 °C
    • Separate sink and source output for easy gate driving
      configuration
    • Short propagation delay: 75 ns
    • UVLO function
    • Gate driving voltage up to 26 V
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Temperature shutdown protection
    • Standby function