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    EVSTGAP2SICSN

    Demonstration board for STGAP2SICSN isolated 4 A single gate driver

    Parameters
    Core ProductSTGAP2SICSN
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The EVSTGAP2SICSN is a half-bridge evaluation board designed to evaluate the STGAP2SICSN isolated single gate driver.The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making the device suitable also for high power inverter applications such as motor drivers in...
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    Key features
    Key features
    • Board
      • Half
        bridge configuration, high voltage rail up to 520
        V
      • SCTH35N65G2V-7: 650 V, 55 mΩ 2nd generation SiC
        MOSFET
      • Negative
        gate driving
      • On-board
        isolated DC-DC converters to supply high-side and
        low-side gate drivers, fed by VAUX = 5 V, with 5.2
        kV maximum isolation
      • VDD logic supplied by on-board generated 3.3 V or VAUX = 5
        V
      • Easy
        jumper selection of driving voltage configuration:
        +17/0 V; +17/-3 V; +19/0 V; +19/-3 V
    • Device
      • 1700 V functional isolation
      • Driver current capability: 4 A source/sink @
        25 °C
      • Separate sink and source output for easy gate driving
        configuration
      • Short propagation delay: 75 ns
      • UVLO function
      • Gate driving voltage up to 26 V
      • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
      • Temperature shutdown protection
      • Standby function
    Out of Stock
    Quantity $ per unit Savings
    1-2$51.650%
    2 + Contact sales
    $51.65
    Parameters
    Core ProductSTGAP2SICSN
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The EVSTGAP2SICSN is a half-bridge evaluation board designed to evaluate the STGAP2SICSN isolated single gate driver.The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making the device suitable also for high power inverter applications such as motor drivers in...
    Read More

    Key features
    Key features
    • Board
      • Half
        bridge configuration, high voltage rail up to 520
        V
      • SCTH35N65G2V-7: 650 V, 55 mΩ 2nd generation SiC
        MOSFET
      • Negative
        gate driving
      • On-board
        isolated DC-DC converters to supply high-side and
        low-side gate drivers, fed by VAUX = 5 V, with 5.2
        kV maximum isolation
      • VDD logic supplied by on-board generated 3.3 V or VAUX = 5
        V
      • Easy
        jumper selection of driving voltage configuration:
        +17/0 V; +17/-3 V; +19/0 V; +19/-3 V
    • Device
      • 1700 V functional isolation
      • Driver current capability: 4 A source/sink @
        25 °C
      • Separate sink and source output for easy gate driving
        configuration
      • Short propagation delay: 75 ns
      • UVLO function
      • Gate driving voltage up to 26 V
      • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
      • Temperature shutdown protection
      • Standby function
    Associated products