STGAP2SICSN

Galvanically isolated 4 A single gate driver for SiC MOSFETs

Parameters

Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	125.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	SO-8

Description

The STGAP2SICSN is a single gate driver which provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry.The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid and high power...
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Key features

Key features
High voltage rail up to 1700 V Driver current capability: 4 A sink/source @25 °C dV/dt transient immunity ±100 V/ns in full temperature range Overall input-output propagation delay: 75 ns Separate sink and source option for easy gate driving configuration 4 A Miller CLAMP dedicated pin option UVLO function Gate driving voltage up to 26 V 3.3 V, 5 V TTL/CMOS inputs with hysteresis Temperature shutdown protection Standby function 4.8 kV_PK isolation UL 1577 recognized Narrow body SO-8

Out of Stock

Quantity	$ per unit	Savings
1-9	$2.92	0%
10-24	$1.90	35%
25-99	$1.73	41%
100-249	$1.45	50%
250-499	$1.36	53%
500	$1.20	59%
500 +	Contact sales

$2.92

Parameters

Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	125.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	SO-8

Description

Key features

Key features
High voltage rail up to 1700 V Driver current capability: 4 A sink/source @25 °C dV/dt transient immunity ±100 V/ns in full temperature range Overall input-output propagation delay: 75 ns Separate sink and source option for easy gate driving configuration 4 A Miller CLAMP dedicated pin option UVLO function Gate driving voltage up to 26 V 3.3 V, 5 V TTL/CMOS inputs with hysteresis Temperature shutdown protection Standby function 4.8 kV_PK isolation UL 1577 recognized Narrow body SO-8