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HCF40106YM013TR

Hex Schmitt Trigger

Supply Voltage Min Volt3.0
Supply Voltage Max Volt20.0
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack3
GradeAutomotive
Package NameSO-14

The HCF40106 is a monolithic integrated circuit fabricated in metal oxide semiconductor technology available in an SO-14 package.The HCF40106 consists of six Schmitt trigger circuits. Each circuit functions as an inverter with Schmitt trigger action on the input. The trigger switches at different...
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Key features
  • Schmitt trigger action with no external components
  • Hysteresis voltage typically: 0.9 V at VDD= 5 V 2.3 V at VDD=10 V 3.5 V at VDD=15 V
  • Noise immunity greater than 50%
  • No limit on input rise and fall times
  • Low VDDto VSScurrent during slow input ramp
  • Standardized symmetrical output characteristics
  • Quiescent current specified up to 20 V
  • 5 V, 10 V, and 15 V parametric ratings
  • Input leakage current II= 100 nA (max.) at VDD= 18 V and TA= 25 °C
  • 100% tested for quiescent current
  • ESD performance
    • HBM: 2 kV
    • MM: 200 V
    • CDM: 1 kV
In stock
Quantity $ per unit Savings
1-9$0.590%
10-99$0.4918%
100-499$0.3738%
500$0.3147%
Contact sales
$0.59
$0.59
Supply Voltage Min Volt3.0
Supply Voltage Max Volt20.0
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack3
GradeAutomotive
Package NameSO-14

The HCF40106 is a monolithic integrated circuit fabricated in metal oxide semiconductor technology available in an SO-14 package.The HCF40106 consists of six Schmitt trigger circuits. Each circuit functions as an inverter with Schmitt trigger action on the input. The trigger switches at different...
Read More

Key features
  • Schmitt trigger action with no external components
  • Hysteresis voltage typically: 0.9 V at VDD= 5 V 2.3 V at VDD=10 V 3.5 V at VDD=15 V
  • Noise immunity greater than 50%
  • No limit on input rise and fall times
  • Low VDDto VSScurrent during slow input ramp
  • Standardized symmetrical output characteristics
  • Quiescent current specified up to 20 V
  • 5 V, 10 V, and 15 V parametric ratings
  • Input leakage current II= 100 nA (max.) at VDD= 18 V and TA= 25 °C
  • 100% tested for quiescent current
  • ESD performance
    • HBM: 2 kV
    • MM: 200 V
    • CDM: 1 kV